IXFA130N10T
IXFP130N10T
65
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
62
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
55
R G = 5 Ω
V GS = 10V
V DS = 50V
58
54
R G = 5 Ω
V GS = 10V
V DS = 50V
50
50
45
46
42
T J = 25oC
40
35
I
D
= 50A
38
34
30
T J = 125oC
30
I
D
= 25A
26
25
22
25
35
45
55
65
75
85
95
105
115
125
25
30
35
40
45
50
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
130
53
40
68
120
110
100
90
80
70
t r t d(on) - - - -
T J = 125oC, V GS = 10V
V DS = 50V
I D = 50A
I D = 25A
50
47
44
41
38
35
38
36
34
32
t f t d(off) - - - -
R G = 5 Ω , V GS = 10V
V DS = 50V
I D = 25A
64
60
56
52
60
32
50
40
29
26
30
28
I D = 50A
48
44
30
23
20
20
26
40
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95
105
115
125
R G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
40
70
100
170
38
36
T J = 125oC
66
62
90
80
t r t d(on) - - - -
T J = 125oC, V GS = 10V
V DS = 50V
25A < I
D
< 50A
150
130
34
t f
t d(off) - - - -
58
R G = 5 Ω , V GS = 10V
70
110
32
V DS = 50V
54
60
I D = 25A
90
30
50
28
T J = 25oC
46
50
I
D
= 50A
70
26
24
42
38
40
30
50
30
25
30
35
40
45
50
4
6
8
10
12
14
16
18
20
I D - Amperes
? 2008 IXYS CORPORATION, All rights reserved
R G - Ohms
IXYS REF: T_130N10T (4V)07-29-08-A
相关PDF资料
IXFA16N50P MOSFET N-CH 500V 16A D2-PAK
IXFA230N075T2-7 MOSFET N-CH 75V 230A TO-263-7
IXFA230N075T2 MOSFET N-CH 75V 230A TO-263AA
IXFA3N120 MOSFET N-CH 1200V 3A TO-263
IXFA3N80 MOSFET N-CH 800V 3.6A TO-263
IXFA4N100P MOSFET N-CH 1000V 4A D2PAK
IXFA4N100Q-TRL MOSFET N-CH 1000V 4A TO-263
IXFA4N100Q MOSFET N-CH 1000V 4A TO-263
相关代理商/技术参数
IXFA130N10T2 功能描述:MOSFET Trench T2 HiperFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA14N60P 功能描述:MOSFET 600V 14A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA14N60P3 功能描述:MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA16N50P 功能描述:MOSFET 500V 16A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA16N50P3 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA16N60P3 制造商:IXYS Corporation 功能描述:MOSFET N-CH 600V 16A TO-263AA
IXFA180N10T2 功能描述:MOSFET Trench T2 HiperFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA20N50P3 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube